Sol gel ZnO films doped with Mg and Li evaluated for charged particle detectors

John W. Murphy, Alexander Eddy, George R. Kunnen, Israel Mejia, Kurtis D. Cantley, David R. Allee, Manuel A. Quevedo-Lopez, Bruce E. Gnade

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this work we assess the feasibility of ZnO films deposited from a sol gel precursor as a material for thin film charged particle detectors. There are many reports of polycrystalline ZnO thin film transistors (TFTs) in the literature, deposited by sputtering, pulsed laser deposition, and sol gel. There are also reports of sol gel derived ZnO doped with Li or Mg to increase the resistivity, however, these works only measure resistivity of the films, without determining the effect of doping on the carrier concentration. We study the effects of doping the ZnO with Mg and Li as well as the effects of thickness on the films' resistivity, mobility, and carrier concentration, since these material parameters are critical for a charged particle sensor. Carrier concentration is particularly important because it must be kept low in order for the intrinsic region of a p-i-n diode to be depleted. In order to accomplish this we fabricate and electrically characterize test tructures for resistivity, test structures for hall measurement, common back-gate TFTs, and metal-insulatorsemiconductor (MIS) capacitors. We also conduct physical characterization techniques such as x-ray diffraction (XRD), atomic force microscopy (AFM), electron microscopy, UV-Vis spectroscopy, and ellipsometry to determine the effect of doping and film thickness on the microstructure and optical properties of the ZnO.

Original languageEnglish
Title of host publicationFlexible Electronics
PublisherSociety of Photo-Optical Instrumentation Engineers
ISBN (Print)9780819495167
StatePublished - 29 May 2013
EventSPIE Defense, Security, and Sensing: Flexible Electronics - Baltimore, MD, United States
Duration: 29 Apr 20133 May 2013
Conference number: 8730

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSPIE Defense, Security, and Sensing
Abbreviated titleFlexible Electronics
Country/TerritoryUnited States
CityBaltimore, MD
Internet address


  • Zinc oxide
  • Lithium
  • Magnesium
  • Sensors
  • Doping
  • Particles
  • Capacitors
  • Dielectrics
  • Ions
  • Semiconductors


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